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Title: Reliable determination of the Cu/n-Si Schottky barrier height by using in-device hot-electron spectroscopy

Abstract

We show the operation of a Cu/Al{sub 2}O{sub 3}/Cu/n-Si hot-electron transistor for the straightforward determination of a metal/semiconductor energy barrier height even at temperatures below carrier-freeze out in the semiconductor. The hot-electron spectroscopy measurements return a fairly temperature independent value for the Cu/n-Si barrier of 0.66 ± 0.04 eV at temperatures below 180 K, in substantial accordance with mainstream methods based on complex fittings of either current-voltage (I-V) and capacitance-voltage (C-V) measurements. The Cu/n-Si hot-electron transistors exhibit an OFF current of ∼2 × 10{sup −13} A, an ON/OFF ratio of ∼10{sup 5}, and an equivalent subthreshold swing of ∼96 mV/dec at low temperatures, which are suitable values for potential high frequency devices.

Authors:
; ; ; ; ;  [1];
  1. CIC nanoGUNE, 20018 Donostia-San Sebastian, Basque Country (Spain)
Publication Date:
OSTI Identifier:
22486017
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 107; Journal Issue: 18; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM OXIDES; CAPACITANCE; ELECTRIC POTENTIAL; ELECTRON SPECTROSCOPY; EQUIPMENT; FREEZING OUT; SEMICONDUCTOR MATERIALS; TRANSISTORS

Citation Formats

Parui, Subir, Atxabal, Ainhoa, Ribeiro, Mário, Bedoya-Pinto, Amilcar, Sun, Xiangnan, Llopis, Roger, Casanova, Fèlix, Hueso, Luis E., E-mail: s.parui@nanogune.eu, E-mail: l.hueso@nanogune.eu, and IKERBASQUE, Basque Foundation for Science, 48011 Bilbao, Basque Country. Reliable determination of the Cu/n-Si Schottky barrier height by using in-device hot-electron spectroscopy. United States: N. p., 2015. Web. doi:10.1063/1.4934885.
Parui, Subir, Atxabal, Ainhoa, Ribeiro, Mário, Bedoya-Pinto, Amilcar, Sun, Xiangnan, Llopis, Roger, Casanova, Fèlix, Hueso, Luis E., E-mail: s.parui@nanogune.eu, E-mail: l.hueso@nanogune.eu, & IKERBASQUE, Basque Foundation for Science, 48011 Bilbao, Basque Country. Reliable determination of the Cu/n-Si Schottky barrier height by using in-device hot-electron spectroscopy. United States. https://doi.org/10.1063/1.4934885
Parui, Subir, Atxabal, Ainhoa, Ribeiro, Mário, Bedoya-Pinto, Amilcar, Sun, Xiangnan, Llopis, Roger, Casanova, Fèlix, Hueso, Luis E., E-mail: s.parui@nanogune.eu, E-mail: l.hueso@nanogune.eu, and IKERBASQUE, Basque Foundation for Science, 48011 Bilbao, Basque Country. 2015. "Reliable determination of the Cu/n-Si Schottky barrier height by using in-device hot-electron spectroscopy". United States. https://doi.org/10.1063/1.4934885.
@article{osti_22486017,
title = {Reliable determination of the Cu/n-Si Schottky barrier height by using in-device hot-electron spectroscopy},
author = {Parui, Subir and Atxabal, Ainhoa and Ribeiro, Mário and Bedoya-Pinto, Amilcar and Sun, Xiangnan and Llopis, Roger and Casanova, Fèlix and Hueso, Luis E., E-mail: s.parui@nanogune.eu, E-mail: l.hueso@nanogune.eu and IKERBASQUE, Basque Foundation for Science, 48011 Bilbao, Basque Country},
abstractNote = {We show the operation of a Cu/Al{sub 2}O{sub 3}/Cu/n-Si hot-electron transistor for the straightforward determination of a metal/semiconductor energy barrier height even at temperatures below carrier-freeze out in the semiconductor. The hot-electron spectroscopy measurements return a fairly temperature independent value for the Cu/n-Si barrier of 0.66 ± 0.04 eV at temperatures below 180 K, in substantial accordance with mainstream methods based on complex fittings of either current-voltage (I-V) and capacitance-voltage (C-V) measurements. The Cu/n-Si hot-electron transistors exhibit an OFF current of ∼2 × 10{sup −13} A, an ON/OFF ratio of ∼10{sup 5}, and an equivalent subthreshold swing of ∼96 mV/dec at low temperatures, which are suitable values for potential high frequency devices.},
doi = {10.1063/1.4934885},
url = {https://www.osti.gov/biblio/22486017}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 18,
volume = 107,
place = {United States},
year = {Mon Nov 02 00:00:00 EST 2015},
month = {Mon Nov 02 00:00:00 EST 2015}
}