skip to main content

SciTech ConnectSciTech Connect

Title: Coexistence of type-I and type-II band alignments in In{sub 0.46}Al{sub 0.54}As/Ga{sub 0.46}Al{sub 0.54}As self-assembled quantum dots

Optical properties of In{sub 0.46}Al{sub 0.54}As/Ga{sub 0.46}Al{sub 0.54}As quantum dots (QDs) have been investigated by photoluminescence (PL). At a low temperature of 8 K, the PL peak energy blue-shifts 44 meV and the linewidth broadens by 21 meV as the excitation intensity increases by four orders of magnitude. As the temperature increases, the QD spectra demonstrate a fast redshift and narrowing from ∼35 K. These observations have been explained by the type-II nature of QDs and the lateral carrier transfer due to electronic coupling between neighboring QDs. A special double exponential decay behavior indicates the coexistence of type-I and type-II band alignment in this QD sample.
Authors:
; ; ; ; ;  [1] ;  [2] ; ; ;  [3]
  1. College of Physics Science and Technology, Hebei University, Baoding 071002 (China)
  2. Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054 (China)
  3. Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States)
Publication Date:
OSTI Identifier:
22486013
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 18; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALIGNMENT; CARRIERS; COUPLING; EXCITATION; MILLI EV RANGE; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; QUANTUM DOTS; RED SHIFT; TEMPERATURE RANGE 0065-0273 K