A van der Waals pn heterojunction with organic/inorganic semiconductors
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093 (China)
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing 210093 (China)
- Department of Physics, Southeast University, Nanjing 211189 (China)
- College of Engineering and Applied Science, Nanjing University, Nanjing 210093 (China)
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon (Hong Kong)
van der Waals (vdW) heterojunctions formed by two-dimensional (2D) materials have attracted tremendous attention due to their excellent electrical/optical properties and device applications. However, current 2D heterojunctions are largely limited to atomic crystals, and hybrid organic/inorganic structures are rarely explored. Here, we fabricate the hybrid 2D heterostructures with p-type dioctylbenzothienobenzothiophene (C{sub 8}-BTBT) and n-type MoS{sub 2}. We find that few-layer C{sub 8}-BTBT molecular crystals can be grown on monolayer MoS{sub 2} by vdW epitaxy, with pristine interface and controllable thickness down to monolayer. The operation of the C{sub 8}-BTBT/MoS{sub 2} vertical heterojunction devices is highly tunable by bias and gate voltages between three different regimes: interfacial recombination, tunneling, and blocking. The pn junction shows diode-like behavior with rectifying ratio up to 10{sup 5} at the room temperature. Our devices also exhibit photovoltaic responses with a power conversion efficiency of 0.31% and a photoresponsivity of 22 mA/W. With wide material combinations, such hybrid 2D structures will offer possibilities for opto-electronic devices that are not possible from individual constituents.
- OSTI ID:
- 22486011
- Journal Information:
- Applied Physics Letters, Vol. 107, Issue 18; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
GENERAL PHYSICS
CHANNELING
EFFICIENCY
ELECTRIC POTENTIAL
EPITAXY
HETEROJUNCTIONS
HYBRIDIZATION
INTERFACES
MOLECULAR CRYSTALS
MOLYBDENUM SULFIDES
OPTICAL PROPERTIES
PHOTOVOLTAIC EFFECT
RECOMBINATION
SEMICONDUCTOR MATERIALS
TUNNEL EFFECT
TWO-DIMENSIONAL SYSTEMS
VAN DER WAALS FORCES