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Title: Type II InAs/GaAsSb quantum dots: Highly tunable exciton geometry and topology

External control over the electron and hole wavefunctions geometry and topology is investigated in a p-i-n diode embedding a dot-in-a-well InAs/GaAsSb quantum structure with type II band alignment. We find highly tunable exciton dipole moments and largely decoupled exciton recombination and ionization dynamics. We also predicted a bias regime where the hole wavefunction topology changes continuously from quantum dot-like to quantum ring-like as a function of the external bias. All these properties have great potential in advanced electro-optical applications and in the investigation of fundamental spin-orbit phenomena.
Authors:
; ; ;  [1] ; ; ; ;  [2]
  1. IMM-Instituto de Microelectrónica de Madrid (CNM-CSIC), Isaac Newton 8, PTM, E-28760 Tres Cantos, Madrid (Spain)
  2. Institute for Systems based on Optoelectronics and Microtechnology (ISOM), Universidad Politécnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain)
Publication Date:
OSTI Identifier:
22486009
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 18; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DIPOLE MOMENTS; ELECTRONS; GEOMETRY; HOLES; INDIUM ARSENIDES; L-S COUPLING; QUANTUM DOTS; SPIN; TOPOLOGY; WAVE FUNCTIONS