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Title: Hall effect in the extremely large magnetoresistance semimetal WTe{sub 2}

We systematically measured the Hall effect in the extremely large magnetoresistance semimetal WTe{sub 2}. By carefully fitting the Hall resistivity to a two-band model, the temperature dependencies of the carrier density and mobility for both electron- and hole-type carriers were determined. We observed a sudden increase in the hole density below ∼160 K, which is likely associated with the temperature-induced Lifshitz transition reported by a previous photoemission study. In addition, a more pronounced reduction in electron density occurs below 50 K, giving rise to comparable electron and hole densities at low temperature. Our observations indicate a possible electronic structure change below 50 K, which might be the direct driving force of the electron-hole “compensation” and the extremely large magnetoresistance as well. Numerical simulations imply that this material is unlikely to be a perfectly compensated system.
Authors:
; ; ; ; ;  [1] ; ; ;  [2] ;  [2] ;  [3]
  1. Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)
  2. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Science, Beijing 100190 (China)
  3. (China)
Publication Date:
OSTI Identifier:
22486004
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 18; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CARRIER DENSITY; CARRIERS; COMPUTERIZED SIMULATION; DENSITY; ELECTRON DENSITY; ELECTRONIC STRUCTURE; ELECTRONS; HALL EFFECT; HOLES; MAGNETORESISTANCE; MOBILITY; PHOTOEMISSION; SEMIMETALS; TEMPERATURE RANGE 0000-0013 K; TEMPERATURE RANGE 0013-0065 K