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Title: Study of Ho-doped Bi{sub 2}Te{sub 3} topological insulator thin films

Breaking time-reversal symmetry through magnetic doping of topological insulators has been identified as a key strategy for unlocking exotic physical states. Here, we report the growth of Bi{sub 2}Te{sub 3} thin films doped with the highest magnetic moment element Ho. Diffraction studies demonstrate high quality films for up to 21% Ho incorporation. Superconducting quantum interference device magnetometry reveals paramagnetism down to 2 K with an effective magnetic moment of ∼5 μ{sub B}/Ho. Angle-resolved photoemission spectroscopy shows that the topological surface state remains intact with Ho doping, consistent with the material's paramagnetic state. The large saturation moment achieved makes these films useful for incorporation into heterostructures, whereby magnetic order can be introduced via interfacial coupling.
Authors:
 [1] ;  [2] ; ; ; ;  [1] ;  [1] ;  [3] ; ;  [4] ; ; ;  [5] ;  [6]
  1. Department of Physics, Clarendon Laboratory, University of Oxford, Oxford OX1 3PU (United Kingdom)
  2. (United States)
  3. (United Kingdom)
  4. Magnetic Spectroscopy Group, Diamond Light Source, Didcot OX11 0DE (United Kingdom)
  5. IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120 (United States)
  6. Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States)
Publication Date:
OSTI Identifier:
22486000
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 18; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; BISMUTH TELLURIDES; COUPLING; DIFFRACTION; DOPED MATERIALS; MAGNETIC MOMENTS; PARAMAGNETISM; PHOTOELECTRON SPECTROSCOPY; SQUID DEVICES; SURFACES; SYMMETRY; THIN FILMS; TOPOLOGY