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Title: Two-color detection with charge sensitive infrared phototransistors

Highly sensitive two-color detection is demonstrated at wavelengths of 9 μm and 14.5 μm by using a charge sensitive infrared phototransistor fabricated in a triple GaAs/AlGaAs quantum well (QW) crystal. Two differently thick QWs (7 nm- and 9 nm-thicknesses) serve as photosensitive floating gates for the respective wavelengths via intersubband excitation: The excitation in the QWs is sensed by a third QW, which works as a conducting source-drain channel in the photosensitive transistor. The two spectral bands of detection are shown to be controlled by front-gate biasing, providing a hint for implementing voltage tunable ultra-highly sensitive detectors.
Authors:
;  [1] ;  [2] ;  [3] ;  [2] ;  [1] ;  [4]
  1. Institute of Industrial Science, The University of Tokyo, Komaba 4-6-1, Meguro-ku, Tokyo 153-8505 (Japan)
  2. Department of Basic Science, The University of Tokyo, Komaba 3-8-1, Meguro-ku, Tokyo 153-8902 (Japan)
  3. (NICT), 4-2-1 Nukui-Kitamachi, Koganei, Tokyo 184-8795 (Japan)
  4. (Japan)
Publication Date:
OSTI Identifier:
22485993
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 18; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM ARSENIDES; COLOR; CRYSTALS; DETECTION; ELECTRIC POTENTIAL; EXCITATION; GALLIUM ARSENIDES; PHOTOTRANSISTORS; QUANTUM WELLS; THICKNESS; WAVELENGTHS