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Title: High performance CaS solar-blind ultraviolet photodiodes fabricated by seed-layer-assisted growth

CaS, with a direct bandgap of 5.38 eV, is expected to be a strong candidate as the active-layer of high performance solar-blind UV photodiodes that have important applications in both civilian and military sectors. Here, we report that a seed-layer-assisted growth approach via molecular beam epitaxy can result in high crystalline quality rocksalt CaS thin films on zincblende GaAs substrates. The Au/CaS/GaAs solar-blind photodiodes demonstrated , more than five orders in its visible rejection power, a photoresponse of 36.8 mA/w at zero bias and a corresponding quantum efficiency as high as 19% at 235 nm.
Authors:
; ;  [1] ;  [2] ; ; ;  [3]
  1. Nano Science and Nano Technology Program, The Hong Kong University of Science and Technology, Hong Kong (China)
  2. (China)
  3. Department of Physics and William Mong Institute of Nano Science and Technology, The Hong Kong University of Science and Technology, Hong Kong (China)
Publication Date:
OSTI Identifier:
22485989
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 18; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CALCIUM SULFIDES; EV RANGE 01-10; GALLIUM ARSENIDES; LAYERS; MOLECULAR BEAM EPITAXY; PERFORMANCE; PHOTODIODES; QUANTUM EFFICIENCY; SUBSTRATES; THIN FILMS; ULTRAVIOLET RADIATION; ZINC SULFIDES