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Title: Optical pulse generation in a transistor laser via intra-cavity photon-assisted tunneling and excess base carrier redistribution

For a direct-gap semiconductor (e.g., a p-n junction), photon-assisted tunneling is known to exhibit a high nonlinear absorption. In a transistor laser, as discussed here, the coherent photons generated at the quantum well interact with the collector junction field and “assist” electron tunneling from base to collector, thus resulting in the nonlinear modulation of the laser and the realization of optical pulse generation. 1 and 2 GHz optical pulses are demonstrated in the transistor laser using collector voltage control.
Authors:
; ; ;  [1]
  1. Department of Electrical and Computer Engineering and Micro and Nanotechnology Laboratory, University of Illinois at Urbana-Champaign, 208 N. Wright St., Urbana, Illinois 61801 (United States)
Publication Date:
OSTI Identifier:
22485983
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 18; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ABSORPTION; CARRIERS; CONTROL; GHZ RANGE 01-100; LASERS; MODULATION; NONLINEAR PROBLEMS; PHOTONS; P-N JUNCTIONS; PULSES; QUANTUM WELLS; SEMICONDUCTOR MATERIALS; TRANSISTORS; TUNNEL EFFECT