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Title: Oxidation of ultrathin GaSe

Oxidation of exfoliated gallium selenide (GaSe) is investigated through Raman, photoluminescence, Auger, and X-ray photoelectron spectroscopies. Photoluminescence and Raman intensity reductions associated with spectral features of GaSe are shown to coincide with the emergence of signatures emanating from the by-products of the oxidation reaction, namely, Ga{sub 2}Se{sub 3} and amorphous Se. Photoinduced oxidation is initiated over a portion of a flake highlighting the potential for laser based patterning of two-dimensional heterostructures via selective oxidation.
Authors:
; ; ; ;  [1] ; ; ;  [2] ;  [3]
  1. Sandia National Laboratories, Albuquerque, New Mexico 87123 (United States)
  2. Department of Materials and Metallurgical Engineering, New Mexico Tech., Socorro, New Mexico 87801 (United States)
  3. Sandia National Laboratories, Livermore, California 94551 (United States)
Publication Date:
OSTI Identifier:
22485972
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 17; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; BY-PRODUCTS; GALLIUM SELENIDES; LASERS; OXIDATION; PHOTOLUMINESCENCE; TWO-DIMENSIONAL SYSTEMS; X-RAY PHOTOELECTRON SPECTROSCOPY