Electronic structure of a superconducting topological insulator Sr-doped Bi{sub 2}Se{sub 3}
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240 (China)
Using high-resolution angle-resolved photoemission spectroscopy and scanning tunneling microscopy/spectroscopy, the atomic and low energy electronic structure of the Sr-doped superconducting topological insulators (Sr{sub x}Bi{sub 2}Se{sub 3}) was studied. Scanning tunneling microscopy shows that most of the Sr atoms are not in the van der Waals gap. After Sr doping, the Fermi level was found to move further upwards when compared with the parent compound Bi{sub 2}Se{sub 3}, which is consistent with the low carrier density in this system. The topological surface state was clearly observed, and the position of the Dirac point was determined in all doped samples. The surface state is well separated from the bulk conduction bands in the momentum space. The persistence of separated topological surface state combined with small Fermi energy makes this superconducting material a very promising candidate for the time reversal invariant topological superconductor.
- OSTI ID:
- 22485961
- Journal Information:
- Applied Physics Letters, Vol. 107, Issue 17; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Topological Surface States of Dirac Fermions in n-Bi2Te3-ySey Thermoelectrics
Synthesis, Magnetic Properties, and Electronic Structure of Magnetic Topological Insulator MnBi2Se4