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Title: Polarization-induced Zener tunnel diodes in GaN/InGaN/GaN heterojunctions

By the insertion of thin In{sub x}Ga{sub 1−x}N layers into Nitrogen-polar GaN p-n junctions, polarization-induced Zener tunnel junctions are studied. The reverse-bias interband Zener tunneling current is found to be weakly temperature dependent, as opposed to the strongly temperature-dependent forward bias current. This indicates tunneling as the primary reverse-bias current transport mechanism. The Indium composition in the InGaN layer is systematically varied to demonstrate the increase in the interband tunneling current. Comparing the experimentally measured tunneling currents to a model helps identify the specific challenges in potentially taking such junctions towards nitride-based polarization-induced tunneling field-effect transistors.
Authors:
; ; ; ;  [1] ; ;  [1] ;  [2]
  1. Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States)
  2. (United States)
Publication Date:
OSTI Identifier:
22485953
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 16; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CURRENTS; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDES; HETEROJUNCTIONS; P-N JUNCTIONS; POLARIZATION; TEMPERATURE DEPENDENCE; TUNNEL DIODES; TUNNEL EFFECT