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Title: Resonance Raman mapping as a tool to monitor and manipulate Si nanocrystals in Si-SiO{sub 2} nanocomposite

Specially designed laser heating experiment along with Raman mapping on Si-SiO{sub 2} nanocomposites elucidates the contribution of core and surface/interface in the intermediate frequency range (511–514 cm{sup −1}) Si phonons. The contribution of core to surface/interface increases with the size of Si nanocrystal, which itself increases on laser irradiation. Further, it is found that resonance Raman is crucial to the observance of surface/interface phonons and wavelength dependent Raman mapping can be corroborated with band edges observed in absorption spectra. This understanding can be gainfully used to manipulate and characterize Si-SiO{sub 2} nanocomposite, simultaneously for photovoltaic device applications.
Authors:
;  [1] ;  [2] ;  [3] ; ;  [4] ;  [2]
  1. Laser Physics Applications Section, Raja Ramanna Centre for Advanced Technology, Indore-452013 (India)
  2. (India)
  3. Laser Material Processing Division, Raja Ramanna Centre for Advanced Technology, Indore-452013 (India)
  4. Homi Bhabha National Institute, Raja Ramanna Centre for Advanced Technology, Indore-452013 (India)
Publication Date:
OSTI Identifier:
22485948
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 16; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ABSORPTION SPECTRA; DESIGN; FREQUENCY RANGE; INTERFACES; LASER RADIATION; LASER-RADIATION HEATING; MAPPING; NANOCOMPOSITES; NANOSTRUCTURES; PHONONS; PHOTOVOLTAIC EFFECT; RESONANCE; SILICON OXIDES; SURFACES