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Title: Effect of impurity doping in gapped bilayer graphene

Impurity doping plays a pivotal role in semiconductor electronics. We study the doping effect in a two-dimensional semiconductor, gapped bilayer graphene. By employing in situ deposition of calcium on the bilayer graphene, dopants are controllably introduced. Low temperature transport results show a variable range hopping conduction near the charge neutrality point persisting up to 50‚ÄČK, providing evidence for the impurity levels inside the gap. Our experiment confirms a predicted peculiar effect in the gapped bilayer graphene, i.e., formation of in-gap states even if the bare impurity level lies in the conduction band. The result provides perspective on the effect of doping and impurity levels in semiconducting bilayer graphene.
Authors:
; ; ; ; ;  [1]
  1. State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Peking University, Beijing 100871, China and Collaborative Innovation Center of Quantum Matter, Beijing 100871 (China)
Publication Date:
OSTI Identifier:
22485944
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 16; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CALCIUM; DEPOSITION; DOPED MATERIALS; GRAPHENE; IMPURITIES; LAYERS; SEMICONDUCTOR MATERIALS; TWO-DIMENSIONAL SYSTEMS