High temperature and current density induced degradation of multi-layer graphene
- Korea Institute of Machinery and Materials, 156 Gajungbuk-ro, Yuseong-gu, Daejeon 305-343 (Korea, Republic of)
We present evidence of moderate current density, when accompanied with high temperature, promoting migration of foreign atoms on the surface of multi-layer graphene. Our in situ transmission electron microscope experiments show migration of silicon atoms at temperatures above 800 °C and current density around 4.2 × 10{sup 7} A/cm{sup 2}. Originating from the micro-machined silicon structures that clamp the freestanding specimen, the atoms are observed to react with the carbon atoms in the multi-layer graphene to produce silicon carbide at temperatures of 900–1000 °C. In the absence of electrical current, there is no migration of silicon and only pyrolysis of polymeric residue is observed.
- OSTI ID:
- 22485943
- Journal Information:
- Applied Physics Letters, Vol. 107, Issue 16; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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