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Title: Giant enhancement in the ferroelectric field effect using a polarization gradient

Coupling of switchable ferroelectric polarization with the carrier transport in an adjacent semiconductor enables a robust, non-volatile manipulation of the conductance in a host of low-dimensional systems, including the two-dimensional electron liquid that forms at the LaAlO{sub 3} (LAO)-SrTiO{sub 3} (STO) interface. However, strength of the gate-channel coupling is relatively weak, limited in part by the electrostatic potential difference across a ferroelectric gate. Here, through application of phenomenological Landau-Ginzburg-Devonshire theory and self-consistent Poisson-Schrödinger model calculations, we show how compositional grading of PbZr{sub 1−x}Ti{sub x}O{sub 3} ferroelectric gates enables a more than twenty-five-fold increase in the LAO/STO channel conductance on/off ratios. Incorporation of polarization gradients in ferroelectric gates can enable breakthrough performance of ferroelectric non-volatile memories.
Authors:
 [1] ;  [2] ;  [3] ;  [1] ;  [3] ;  [3]
  1. Department of Electrical and Computer Engineering, Drexel University, Philadelphia, Pennsylvania 19104 (United States)
  2. Department of Materials Science and Engineering, Drexel University, Philadelphia, Pennsylvania 19104 (United States)
  3. (United States)
Publication Date:
OSTI Identifier:
22485938
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 16; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CARRIERS; COUPLING; FERROELECTRIC MATERIALS; INTERFACES; LIQUIDS; PERFORMANCE; POLARIZATION; SEMICONDUCTOR MATERIALS; STRONTIUM TITANATES; TWO-DIMENSIONAL SYSTEMS; VOLATILITY