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Title: Transfer characteristics and low-frequency noise in single- and multi-layer MoS{sub 2} field-effect transistors

Leveraging nanoscale field-effect transistors (FETs) in integrated circuits depends heavily on its transfer characteristics and low-frequency noise (LFN) properties. Here, we report the transfer characteristics and LFN in FETs fabricated with molybdenum disulfide (MoS{sub 2}) with different layer (L) counts. 4L to 6L devices showed highest I{sub ON}-I{sub OFF} ratio (≈10{sup 8}) whereas LFN was maximum for 1L device with normalized power spectral density (PSD) ≈1.5 × 10{sup −5 }Hz{sup −1}. For devices with L ≈ 6, PSD was minimum (≈2 × 10{sup −8 }Hz{sup −1}). Further, LFN for single and few layer devices satisfied carrier number fluctuation (CNF) model in both weak and strong accumulation regimes while thicker devices followed Hooge's mobility fluctuation model in the weak accumulation regime and CNF model in strong accumulation regime, respectively. Transfer-characteristics and LFN experimental data are explained with the help of model incorporating Thomas-Fermi charge screening and inter-layer resistance coupling.
Authors:
 [1] ;  [2] ;  [2] ;  [1] ;  [2] ; ; ; ; ;  [3] ;  [4] ;  [1]
  1. Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States)
  2. (United States)
  3. Sensors and Electron Devices Directorate, Army Research Laboratory, Adelphi, Maryland 20783 (United States)
  4. Department of Electrical and Computer Engineering, George Mason University, Fairfax, Virginia 22030 (United States)
Publication Date:
OSTI Identifier:
22485932
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 16; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CARRIERS; FIELD EFFECT TRANSISTORS; FLUCTUATIONS; INTEGRATED CIRCUITS; LAYERS; MOBILITY; MOLYBDENUM SULFIDES; NANOSTRUCTURES; NOISE; SPECTRAL DENSITY; THOMAS-FERMI MODEL