skip to main content

Title: Surface confined quantum well state in MoS{sub 2}(0001) thin film

Surface confined quantum well state (scQWS) is a QWS confined around the surface of a thin film whose electronic energy is smaller than the work function of the film. The scQWS is rather rare in most thin films. Here, we show the existence of scQWS in thin films of transition metal dichalcogenides, MoS{sub 2}. Signatures of scQWS are identified as the overall downward band dispersion in the bulk gap of 2 H-MoS{sub 2} thin film at larger binding energy range. These scQWSs are also characterized with a Shockley-type surface state having an inverse parabolic decay into the film and a symmetric (asymmetric) distribution of projected charge density at the two surfaces of odd-layer (even-layer) films. Our findings of scQWS in MoS{sub 2} shed some light on understanding the electronic properties of 2D materials with implications in future 2D electronic devices.
Authors:
; ; ; ;  [1] ;  [2]
  1. Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)
  2. Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112 (United States)
Publication Date:
OSTI Identifier:
22485928
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 16; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ASYMMETRY; BINDING ENERGY; CHARGE DENSITY; ELECTRONIC EQUIPMENT; LAYERS; MOLYBDENUM SULFIDES; QUANTUM WELLS; SURFACES; SYMMETRY; THIN FILMS; TRANSITION ELEMENTS; TWO-DIMENSIONAL SYSTEMS; WORK FUNCTIONS