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Title: Oxygen defect processes in silicon and silicon germanium

Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.
Authors:
 [1] ;  [2] ; ;  [3] ;  [4]
  1. Faculty of Engineering and Computing, Coventry University, Priory Street, Coventry CV1 5FB (United Kingdom)
  2. (United Kingdom)
  3. Solid State Section, Physics Department, University of Athens, Panepistimiopolis, Zografos, 157 84 Athens (Greece)
  4. PSE Division, KAUST, Thuwal 23955-6900 (Saudi Arabia)
Publication Date:
OSTI Identifier:
22483209
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Reviews; Journal Volume: 2; Journal Issue: 2; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ABSORPTION SPECTROSCOPY; ALLOYS; CARBON; DEFECTS; DENSITY FUNCTIONAL METHOD; EQUIPMENT; GERMANIUM; INFRARED SPECTRA; OXYGEN; PHOTOVOLTAIC EFFECT; SEMICONDUCTOR MATERIALS; SENSORS; SILICON