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Title: Electrical dependence on the chemical composition of the gate dielectric in indium gallium zinc oxide thin-film transistors

Bottom-gate thin-film transistors were fabricated by depositing a 50 nm InGaZnO (IGZO) channel layer at 150 °C on three separate gate dielectric films: (1) thermal SiO{sub 2}, (2) plasma-enhanced chemical-vapor deposition (PECVD) SiN{sub x}, and (3) a PECVD SiO{sub x}/SiN{sub x} dual-dielectric. X-ray photoelectron and photoluminescence spectroscopy showed the V{sub o} concentration was dependent on the hydrogen concentration of the underlying dielectric film. IGZO films on SiN{sub x} (high V{sub o}) and SiO{sub 2} (low V{sub o}) had the highest and lowest conductivity, respectively. A PECVD SiO{sub x}/SiN{sub x} dual-dielectric layer was effective in suppressing hydrogen diffusion from the nitride layer into the IGZO and resulted in higher resistivity films.
Authors:
; ;  [1]
  1. Department of Electrical and Computer Engineering, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1 (Canada)
Publication Date:
OSTI Identifier:
22483202
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 2; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ABUNDANCE; CHEMICAL COMPOSITION; CHEMICAL VAPOR DEPOSITION; DEPOSITS; DIELECTRIC MATERIALS; DIFFUSION; GALLIUM; HYDROGEN; INDIUM; LAYERS; PHOTOLUMINESCENCE; PLASMA; SILICON OXIDES; SPECTROSCOPY; THIN FILMS; TRANSISTORS; X RADIATION; ZINC OXIDES