skip to main content

Title: Electric field modulation of Schottky barrier height in graphene/MoSe{sub 2} van der Waals heterointerface

We demonstrate a vertical field-effect transistor based on a graphene/MoSe{sub 2} van der Waals (vdW) heterostructure. The vdW interface between the graphene and MoSe{sub 2} exhibits a Schottky barrier with an ideality factor of around 1.3, suggesting a high-quality interface. Owing to the low density of states in graphene, the position of the Fermi level in the graphene can be strongly modulated by an external electric field. Therefore, the Schottky barrier height at the graphene/MoSe{sub 2} vdW interface is also modulated. We demonstrate a large current ON-OFF ratio of 10{sup 5}. These results point to the potential high performance of the graphene/MoSe{sub 2} vdW heterostructure for electronics applications.
Authors:
; ; ;  [1] ; ;  [1] ;  [2]
  1. Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505 (Japan)
  2. (Japan)
Publication Date:
OSTI Identifier:
22483198
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 2; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DENSITY OF STATES; ELECTRIC FIELDS; FERMI LEVEL; GRAPHENE; INTERFACES; MODULATION; MOLYBDENUM SELENIDES; PERFORMANCE; POTENTIALS