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Title: Suppression of 1/f noise in near-ballistic h-BN-graphene-h-BN heterostructure field-effect transistors

We have investigated low-frequency 1/f noise in the boron nitride–graphene–boron nitride heterostructure field-effect transistors on Si/SiO{sub 2} substrates (f is a frequency). The device channel was implemented with a single layer graphene encased between two layers of hexagonal boron nitride. The transistors had the charge carrier mobility in the range from ∼30 000 to ∼36 000 cm{sup 2}/Vs at room temperature. It was established that the noise spectral density normalized to the channel area in such devices can be suppressed to ∼5 × 10{sup −9 }μm{sup 2 }Hz{sup −1}, which is a factor of ×5 – ×10 lower than that in non-encapsulated graphene devices on Si/SiO{sub 2}. The physical mechanism of noise suppression was attributed to screening of the charge carriers in the channel from traps in SiO{sub 2} gate dielectric and surface defects. The obtained results are important for the electronic and optoelectronic applications of graphene.
Authors:
; ;  [1] ;  [2] ;  [3] ;  [2]
  1. Nano-Device Laboratory (NDL) and Phonon Optimized Engineered Materials (POEM) Center, Department of Electrical and Computer Engineering, Bourns College of Engineering, University of California – Riverside, Riverside, California 92521 (United States)
  2. Departments of Electrical, Computer and Systems Engineering and Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)
  3. (Russian Federation)
Publication Date:
OSTI Identifier:
22483197
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 2; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; BORON NITRIDES; CHARGE CARRIERS; DIELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; GRAPHENE; LAYERS; MOBILITY; NOISE; SILICON OXIDES; SPECTRAL DENSITY; SUBSTRATES; SURFACES; TEMPERATURE RANGE 0273-0400 K; TRAPS