Electronic structure of β-Ga{sub 2}O{sub 3} single crystals investigated by hard X-ray photoelectron spectroscopy

Journal Article · Mon Jul 13 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4926919· OSTI ID:22483184

Li, Guo-Ling ^[1]; Zhang, Fabi; Guo, Qixin ^[2]; Cui, Yi-Tao ^[3]; Oji, Hiroshi; Son, Jin-Young ^[4]

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1. School of Physics and Engineering, Henan University of Science and Technology, Luoyang 471023 (China)
2. Synchrotron Light Application Center, Department of Electrical and Electronic Engineering, Saga University, Saga 840-8502 (Japan)
3. Synchrotron Radiation Research Organization, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)
4. Industrial Application Division, Japan Synchrotron Radiation Institute/SPring8, 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5198 (Japan)

By combination of hard X-ray photoelectron spectroscopy (HAXPES) and first-principles band structure calculations, the electronic states of β-Ga{sub 2}O{sub 3} were investigated to deepen the understanding of bulk information for this compound. The valence band spectra of HAXPES presented the main contribution from Ga 4sp, which are well represented by photoionization cross section weighted partial density of states. The experimental data complemented with the theoretical study yield a realistic picture of the electronic structure for β-Ga{sub 2}O{sub 3}.

• OSTI ID: 22483184
• Journal Information: Applied Physics Letters, Vol. 107, Issue 2; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

74 ATOMIC AND MOLECULAR PHYSICS
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CROSS SECTIONS
DENSITY OF STATES
ELECTRONIC STRUCTURE
GALLIUM OXIDES
HARD X RADIATION
MONOCRYSTALS
PHOTOELECTRON SPECTROSCOPY
PHOTOIONIZATION
SPECTRA
VALENCE