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Title: Electronic structure of β-Ga{sub 2}O{sub 3} single crystals investigated by hard X-ray photoelectron spectroscopy

By combination of hard X-ray photoelectron spectroscopy (HAXPES) and first-principles band structure calculations, the electronic states of β-Ga{sub 2}O{sub 3} were investigated to deepen the understanding of bulk information for this compound. The valence band spectra of HAXPES presented the main contribution from Ga 4sp, which are well represented by photoionization cross section weighted partial density of states. The experimental data complemented with the theoretical study yield a realistic picture of the electronic structure for β-Ga{sub 2}O{sub 3}.
Authors:
 [1] ; ;  [2] ;  [3] ; ;  [4] ;  [5]
  1. School of Physics and Engineering, Henan University of Science and Technology, Luoyang 471023 (China)
  2. Synchrotron Light Application Center, Department of Electrical and Electronic Engineering, Saga University, Saga 840-8502 (Japan)
  3. Synchrotron Radiation Research Organization, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)
  4. Industrial Application Division, Japan Synchrotron Radiation Institute/SPring8, 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5198 (Japan)
  5. (Japan)
Publication Date:
OSTI Identifier:
22483184
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 2; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
74 ATOMIC AND MOLECULAR PHYSICS; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CROSS SECTIONS; DENSITY OF STATES; ELECTRONIC STRUCTURE; GALLIUM OXIDES; HARD X RADIATION; MONOCRYSTALS; PHOTOELECTRON SPECTROSCOPY; PHOTOIONIZATION; SPECTRA; VALENCE