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Title: Origin of the visible emission of black silicon microstructures

Silicon, the mainstay semiconductor in microelectronics, is considered unsuitable for optoelectronic applications due to its indirect electronic band gap that limits its efficiency as light emitter. Here, we univocally determine at the nanoscale the origin of visible emission in microstructured black silicon by cathodoluminescence spectroscopy and imaging. We demonstrate the formation of amorphous silicon oxide microstructures with a white emission. The white emission is composed by four features peaking at 1.98 eV, 2.24 eV, 2.77 eV, and 3.05 eV. The origin of such emissions is related to SiO{sub x} intrinsic point defects and to the sulfur doping due to the laser processing. Similar results go in the direction of developing optoelectronic devices suitable for silicon-based circuitry.
Authors:
 [1] ;  [2] ;  [3] ; ; ;  [1] ; ;  [4] ;  [3] ;  [2]
  1. IMEM-CNR Institute, Parco Area delle Scienze 37/A, 43124 Parma (Italy)
  2. (United States)
  3. School of Engineering and Applied Sciences, Harvard University, 29 Oxford Street, Cambridge, Massachusetts 02138 (United States)
  4. Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139 (United States)
Publication Date:
OSTI Identifier:
22483178
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 2; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CATHODOLUMINESCENCE; EFFICIENCY; EV RANGE 01-10; LASERS; MICROELECTRONICS; MICROSTRUCTURE; NANOSTRUCTURES; OPTOELECTRONIC DEVICES; ORIGIN; POINT DEFECTS; SEMICONDUCTOR MATERIALS; SILICON; SILICON OXIDES; SPECTROSCOPY