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Title: Femtosecond upconverted photocurrent spectroscopy of InAs quantum nanostructures

The carrier upconversion dynamics in InAs quantum nanostructures are studied for intermediate-band solar-cell applications via ultrafast photoluminescence and photocurrent (PC) spectroscopy based on femtosecond excitation correlation (FEC) techniques. Strong upconverted PC-FEC signals are observed under resonant excitation of quantum well islands (QWIs), which are a few monolayer-thick InAs quantum nanostructures. The PC-FEC signal typically decays within a few hundred picoseconds at room temperature, which corresponds to the carrier lifetime in QWIs. The photoexcited electron and hole lifetimes in InAs QWIs are evaluated as functions of temperature and laser fluence. Our results provide solid evidence for electron–hole–hole Auger process, dominating the carrier upconversion in InAs QWIs at room temperature.
Authors:
 [1] ; ;  [1] ;  [2] ;  [3]
  1. Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011 (Japan)
  2. (Japan)
  3. Toyota Technological Institute, Nagoya, Aichi 468-8511 (Japan)
Publication Date:
OSTI Identifier:
22483166
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 1; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CARRIER LIFETIME; CARRIERS; CORRELATIONS; EXCITATION; HOLES; INDIUM ARSENIDES; LASERS; PHOTOLUMINESCENCE; QUANTUM WELLS; SIGNALS; SOLAR CELLS; SOLIDS; SPECTROSCOPY; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K