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Title: Temperature dependence of Raman shifts in layered ReSe{sub 2} and SnSe{sub 2} semiconductor nanosheets

Transition metal dichalcogenides (TMDCs) are attractive for variety of nanoscale electronics and optoelectronics devices due to their unique properties. Despite growing progress in the research field of TMDCs, many of their properties are still unknown. In this letter, we report measurements of Raman spectra of rhenium diselenide (ReSe{sub 2}) and tin diselenide (SnSe{sub 2}) layered semiconductor nanosheets as a function of temperature (70–400 K). We analyze the temperature dependence of the positions of eight ReSe{sub 2} modes and SnSe{sub 2} A{sub 1g} mode. All observed Raman mode shifts exhibit nonlinear temperature dependence at low temperatures which is explained by optical phonon decay process into two or three acoustics phonons. The first order temperature coefficients (χ), determined for high temperatures, of rhenium diselenide Raman modes are in the range between −0.0033 and −0.0118 cm{sup −1}/K, whereas χ of tin diselenide A{sub 1g} mode was −0.0129 cm{sup −1}/K. Our findings are useful for further analysis of phonon and thermal properties of these dichalcogenide layered semiconductors.
Authors:
; ; ;  [1]
  1. Faculty of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw (Poland)
Publication Date:
OSTI Identifier:
22483156
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 1; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ACOUSTICS; NANOSTRUCTURES; OPTOELECTRONIC DEVICES; PHONONS; RAMAN SPECTRA; RHENIUM SELENIDES; SEMICONDUCTOR MATERIALS; TEMPERATURE COEFFICIENT; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0273-0400 K; THERMODYNAMIC PROPERTIES; TIN; TIN SELENIDES; TRANSITION ELEMENTS