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Title: Te-doping of self-catalyzed GaAs nanowires

Tellurium (Te)-doping of self-catalyzed GaAs nanowires (NWs) grown by molecular beam epitaxy is reported. The effect of Te-doping on the morphological and crystal structure of the NWs is investigated by scanning electron microscopy and high-resolution transmission electron microscopy. The study reveals that the lateral growth rate increases and axial growth rate decreases with increasing Te doping level. The changes in the NW morphology can be reverted to some extent by changing the growth temperature. At high doping levels, formation of twinning superlattice is observed alongside with the (111)-facetted sidewalls. Finally, the incorporation of Te is confirmed by Raman spectroscopy.
Authors:
; ; ; ;  [1] ;  [2] ;  [3]
  1. Optoelectronics Research Centre, Tampere University of Technology, FI-33101 Tampere (Finland)
  2. Department of Material Science, Tampere University of Technology, FI-33101 Tampere (Finland)
  3. Paul-Drude-Institut f√ľr Festk√∂rperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)
Publication Date:
OSTI Identifier:
22483144
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 1; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CRYSTAL STRUCTURE; GALLIUM ARSENIDES; MOLECULAR BEAM EPITAXY; MORPHOLOGY; NANOWIRES; RAMAN SPECTROSCOPY; RESOLUTION; SCANNING ELECTRON MICROSCOPY; SUPERLATTICES; TELLURIUM; TRANSMISSION ELECTRON MICROSCOPY; TWINNING