The role of water in resistive switching in graphene oxide

Journal Article · Mon Jun 29 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4923323· OSTI ID:22483126

Rogala, M.; Kowalczyk, P. J.; Dabrowski, P.; Wlasny, I.; Kozlowski, W.; Busiakiewicz, A.; Pawlowski, S.; Dobinski, G.; Smolny, M.; Karaduman, I. ^[1]; Lipinska, L.; Kozinski, R.; Librant, K.; Jagiello, J.; Grodecki, K.; Baranowski, J. M. ^[2]; Szot, K. ^[3]

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1. Department of Physics, Gazi University, Teknikokullar, 06500 Ankara (Turkey)
2. Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw (Poland)
3. Institute of Physics, University of Silesia, 40-007 Katowice (Poland)

The resistive switching processes are investigated at the nano-scale in graphene oxide. The modification of the material resistivity is driven by the electrical stimulation with the tip of atomic force microscope. The presence of water in the atmosphere surrounding graphene oxide is found to be a necessary condition for the occurrence of the switching effect. In consequence, the switching is related to an electrochemical reduction. Presented results suggest that by changing the humidity level the in-plane resolution of data storage process can be controlled. These findings are essential when discussing the concept of graphene based resistive random access memories.

• OSTI ID: 22483126
• Journal Information: Applied Physics Letters, Vol. 106, Issue 26; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ATMOSPHERES
ATOMIC FORCE MICROSCOPY
ELECTROCHEMISTRY
GRAPHENE
HUMIDITY
MODIFICATIONS
OXIDES
RANDOMNESS
RESOLUTION
STIMULATION
STORAGE
WATER