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Title: The role of water in resistive switching in graphene oxide

The resistive switching processes are investigated at the nano-scale in graphene oxide. The modification of the material resistivity is driven by the electrical stimulation with the tip of atomic force microscope. The presence of water in the atmosphere surrounding graphene oxide is found to be a necessary condition for the occurrence of the switching effect. In consequence, the switching is related to an electrochemical reduction. Presented results suggest that by changing the humidity level the in-plane resolution of data storage process can be controlled. These findings are essential when discussing the concept of graphene based resistive random access memories.
Authors:
; ; ; ; ; ; ; ; ;  [1] ;  [2] ; ; ; ; ; ;  [3] ;  [4]
  1. Department of Solid State Physics, Faculty of Physics and Applied Informatics, University of Lodz, Pomorska 149/153, 90-236 Lodz (Poland)
  2. Department of Physics, Gazi University, Teknikokullar, 06500 Ankara (Turkey)
  3. Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw (Poland)
  4. Institute of Physics, University of Silesia, 40-007 Katowice (Poland)
Publication Date:
OSTI Identifier:
22483126
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 26; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ATMOSPHERES; ATOMIC FORCE MICROSCOPY; ELECTROCHEMISTRY; GRAPHENE; HUMIDITY; MODIFICATIONS; OXIDES; RANDOMNESS; RESOLUTION; STIMULATION; STORAGE; WATER