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Title: In-plane tunneling anisotropic magnetoresistance in (Ga,Mn)As/GaAs Esaki diodes in the regime of the excess current

We investigate the angular dependence of the tunneling anisotropic magnetoresistance in (Ga,Mn)As/n-GaAs spin Esaki diodes in the regime where the tunneling process is dominated by the excess current through midgap states in (Ga,Mn)As. We compare it to similar measurements performed in the regime of band-to-band tunneling. Whereas the latter show biaxial symmetry typical for magnetic anisotropy observed in (Ga,Mn)As samples, the former is dominated by uniaxial anisotropy along the 〈110〉 axes.
Authors:
 [1] ;  [2] ; ; ; ; ;  [3] ; ;  [1] ;  [4]
  1. Department of Materials Science, Tohoku University, Sendai 980-8579, Miyagi (Japan)
  2. (Japan)
  3. Institute of Experimental and Applied Physics, University of Regensburg, D-93040 Regensburg (Germany)
  4. Institute of Materials Research, Tohoku University, Sendai 980-8577, Miyagi (Japan)
Publication Date:
OSTI Identifier:
22483118
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 26; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANISOTROPY; CURRENTS; GALLIUM ARSENIDES; MAGNETORESISTANCE; SPIN; TUNNEL EFFECT