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Title: Antiferromagnetic order induced by gadolinium substitution in Bi{sub 2}Se{sub 3} single crystals

Magnetic topological insulators can serve as a fundamental platform for various spin-based device applications. We report the antiferromagnetic order induced by the magnetic impurity dopants of Gd in Gd{sub x}Bi{sub 2−x}Se{sub 3} and the systematic results with varying the Gd concentration x ( = 0.14, 0.20, 0.30, and 0.40). The antiferromagnetic order is demonstrated by the magnetic susceptibility, electrical resistivity, and specific heat measurements. The anomaly observed at T{sub N} = 6 K for x ≥ 0.30 shifts towards lower temperature with increasing the magnetic field, indicative of antiferromagnetic ground state. The Gd substitution into Bi{sub 2}Se{sub 3} enables not only tuning the magnetism from paramagnetic to antiferromagnetic for high x (≥ 0.30) but also giving a promising candidate for antiferromagnetic topological insulators.
Authors:
;  [1] ; ;  [2]
  1. Department of Physics, Sogang University, Seoul 121-742 (Korea, Republic of)
  2. Jožef Stefan Institute and University of Ljubljana, Jamova 39, SI-1000 Ljubljana (Slovenia)
Publication Date:
OSTI Identifier:
22483091
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 25; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ABUNDANCE; ANTIFERROMAGNETISM; BISMUTH SELENIDES; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; GADOLINIUM; GROUND STATES; IMPURITIES; MAGNETIC FIELDS; MAGNETIC SUSCEPTIBILITY; MONOCRYSTALS; PARAMAGNETISM; SPECIFIC HEAT; TOPOLOGY