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Title: Direct evidence of single quantum dot emission from GaN islands formed at threading dislocations using nanoscale cathodoluminescence: A source of single photons in the ultraviolet

Intense emission from GaN islands embedded in AlN resulting from GaN/AlN quantum well growth is directly resolved by performing cathodoluminescence spectroscopy in a scanning transmission electron microscope. Line widths down to 440 μeV are measured in a wavelength region between 220 and 310 nm confirming quantum dot like electronic properties in the islands. These quantum dot states can be structurally correlated to islands of slightly enlarged thicknesses of the GaN/AlN quantum well layer preferentially formed in vicinity to dislocations. The quantum dot states exhibit single photon emission in Hanbury Brown-Twiss experiments with a clear antibunching in the second order correlation function at zero time delay.
Authors:
; ; ; ; ; ; ; ;  [1] ; ; ;  [2]
  1. Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, 39106 Magdeburg (Germany)
  2. Institute of Solid State Physics, Technical University Berlin, 10623 Berlin (Germany)
Publication Date:
OSTI Identifier:
22483089
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 25; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM NITRIDES; CATHODOLUMINESCENCE; DISLOCATIONS; GALLIUM NITRIDES; LINE WIDTHS; PHOTONS; QUANTUM DOTS; QUANTUM WELLS; SPECTROSCOPY; TRANSMISSION ELECTRON MICROSCOPY; ULTRAVIOLET RADIATION; WAVELENGTHS