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Title: Three-dimensional evaluation of gettering ability for oxygen atoms at small-angle tilt boundaries in Czochralski-grown silicon crystals

Three-dimensional distribution of oxygen atoms at small-angle tilt boundaries (SATBs) in Czochralski-grown p-type silicon ingots was investigated by atom probe tomography combined with transmission electron microscopy. Oxygen gettering along edge dislocations composing SATBs, post crystal growth, was observed. The gettering ability of SATBs would depend both on the dislocation strain and on the dislocation density. Oxygen atoms would agglomerate in the atomic sites under the tensile hydrostatic stress larger than about 2.0 GPa induced by the dislocations. It was suggested that the density of the atomic sites, depending on the tilt angle of SATBs, determined the gettering ability of SATBs.
Authors:
; ; ; ; ;  [1] ; ; ; ;  [2]
  1. Institute for Materials Research (IMR), Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577 (Japan)
  2. The Oarai Center, IMR, Tohoku University, Oarai, Ibaraki 311-1313 (Japan)
Publication Date:
OSTI Identifier:
22483083
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 25; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ATOMS; CRYSTAL GROWTH; CRYSTALS; DENSITY; EDGE DISLOCATIONS; GETTERING; OXYGEN; PRESSURE RANGE GIGA PA; SILICON; STRAINS; STRESSES; TOMOGRAPHY; TRANSMISSION ELECTRON MICROSCOPY