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Title: Enhanced photocathodic behaviors of Pb(Zr{sub 0.20}Ti{sub 0.80})O{sub 3} films on Si substrates for hydrogen production

Wide bandgap ferroelectric Pb(Zr{sub 0.20}Ti{sub 0.80})O{sub 3} films were deposited on indium tin oxide (ITO) coated Si-pn{sup +} substrates with an intention to form efficient Si-pn{sup +}/ITO/Pb(Zr,Ti)O{sub 3} (PZT) photocathode for hydrogen production. Depolarization electric field generated in PZT film due to poling can drive the photogenerated electrons from Si-pn{sup +} junction to PZT film, resulting in enhanced photoelectrochemical activity of the photocathode. Comparing the electrode with as-prepared PZT film, the photocurrent increased from −100 μA cm{sup −2} to −1.2 mA cm{sup −2} at 0 V vs. reversible hydrogen electrode (RHE) and the onset potential from 0.36 V to 0.7 V vs. RHE under 100 mW cm{sup −2} illumination, manifesting the great advantage of depolarization electric field in driving the photogenerated carriers not only in the ferroelectric film but also on the interface of different semiconductors.
Authors:
; ; ; ;  [1]
  1. College of Physics, Optoelectronics and Energy, Collaborative Innovation Center of Suzhou Nano Science and Technology, Photovoltaic Research Institute of Soochow University & Canadian Solar Inc., and Jiangsu Key Laboratory of Thin Films, Soochow University, 1 Shizi Street, Suzhou 215006 (China)
Publication Date:
OSTI Identifier:
22483075
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 24; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CONNECTORS; DEPOLARIZATION; ELECTRONS; FERROELECTRIC MATERIALS; FILMS; HYDROGEN PRODUCTION; OZONE; PHOTOCATHODES; P-N JUNCTIONS; PZT; SEMICONDUCTOR MATERIALS; TIN OXIDES