skip to main content

SciTech ConnectSciTech Connect

Title: Electrical compensation by Ga vacancies in Ga{sub 2}O{sub 3} thin films

The authors have applied positron annihilation spectroscopy to study the vacancy defects in undoped and Si-doped Ga{sub 2}O{sub 3} thin films. The results show that Ga vacancies are formed efficiently during metal-organic vapor phase epitaxy growth of Ga{sub 2}O{sub 3} thin films. Their concentrations are high enough to fully account for the electrical compensation of Si doping. This is in clear contrast to another n-type transparent semiconducting oxide In{sub 2}O{sub 3}, where recent results show that n-type conductivity is not limited by cation vacancies but by other intrinsic defects such as O{sub i}.
Authors:
;  [1] ; ; ; ; ; ;  [2]
  1. Department of Applied Physics, Aalto University, 00076 Aalto (Finland)
  2. Leibniz Institute for Crystal Growth, 12489 Berlin (Germany)
Publication Date:
OSTI Identifier:
22483069
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 24; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ABUNDANCE; CATIONS; CONCENTRATION RATIO; DOPED MATERIALS; GALLIUM OXIDES; INDIUM OXIDES; ORGANOMETALLIC COMPOUNDS; SPECTROSCOPY; THIN FILMS; VACANCIES