Electrical compensation by Ga vacancies in Ga{sub 2}O{sub 3} thin films

Journal Article · Mon Jun 15 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4922814· OSTI ID:22483069

Korhonen, E.; Tuomisto, F. ^[1]; Gogova, D.; Wagner, G.; Baldini, M.; Galazka, Z.; Schewski, R.; Albrecht, M. ^[2]

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1. Department of Applied Physics, Aalto University, 00076 Aalto (Finland)
2. Leibniz Institute for Crystal Growth, 12489 Berlin (Germany)

The authors have applied positron annihilation spectroscopy to study the vacancy defects in undoped and Si-doped Ga{sub 2}O{sub 3} thin films. The results show that Ga vacancies are formed efficiently during metal-organic vapor phase epitaxy growth of Ga{sub 2}O{sub 3} thin films. Their concentrations are high enough to fully account for the electrical compensation of Si doping. This is in clear contrast to another n-type transparent semiconducting oxide In{sub 2}O{sub 3}, where recent results show that n-type conductivity is not limited by cation vacancies but by other intrinsic defects such as O{sub i}.

• OSTI ID: 22483069
• Journal Information: Applied Physics Letters, Vol. 106, Issue 24; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ABUNDANCE
CATIONS
CONCENTRATION RATIO
DOPED MATERIALS
GALLIUM OXIDES
INDIUM OXIDES
ORGANOMETALLIC COMPOUNDS
SPECTROSCOPY
THIN FILMS
VACANCIES