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Title: Development of a microwave ion source for ion implantations

A microwave ion source is expected to have a long lifetime, as it has fewer consumables. Thus, we are in the process of developing a microwave ion source for ion implantation applications. In this paper, we report on a newly developed plasma chamber and the extracted P{sup +} beam currents. The volume of the plasma chamber is optimized by varying the length of a boron nitride block installed within the chamber. The extracted P{sup +} beam current is more than 30 mA, at a 25 kV acceleration voltage, using PH{sub 3} gas.
Authors:
; ; ; ; ; ; ;  [1]
  1. Technology Research Center, Sumitomo Heavy Industries Ltd., Yokosuka, Kanagawa 237-8555 (Japan)
Publication Date:
OSTI Identifier:
22483052
Resource Type:
Journal Article
Resource Relation:
Journal Name: Review of Scientific Instruments; Journal Volume: 87; Journal Issue: 2; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; ACCELERATION; BEAM CURRENTS; BORON NITRIDES; ELECTRIC POTENTIAL; ION IMPLANTATION; ION SOURCES; LIFETIME; MICROWAVE RADIATION; PHOSPHORUS HYDRIDES; PHOSPHORUS IONS; PLASMA