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Title: Low-energy ion beam-based deposition of gallium nitride

An ion source with a remote plasma chamber excited by a 13.56 MHz radio frequency power was used for low-energy broad ion beam extraction. Optical emission spectral analyses showed the sputtering and postionization of a liquid gallium (Ga) target placed in a chamber separated from the source bombarded by argon (Ar) plasma guided by a bent magnetic field. In addition, an E × B probe successfully showed the extraction of low-energy Ga and Ar ion beams using a dual-electrode extractor configuration. By introducing dilute amounts of nitrogen gas into the system, formation of thin Ga-based films on a silicon substrate was demonstrated as determined from X-ray diffraction and X-ray reflectivity studies.
Authors:
 [1] ;  [2]
  1. Department of Mining, Metallurgical, and Materials Engineering, College of Engineering, University of the Philippines, Diliman, Quezon City 1101 (Philippines)
  2. Graduate School of Science and Engineering, Doshisha University, Kyotanabe, Kyoto 610-0321 (Japan)
Publication Date:
OSTI Identifier:
22483047
Resource Type:
Journal Article
Resource Relation:
Journal Name: Review of Scientific Instruments; Journal Volume: 87; Journal Issue: 2; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; ARGON IONS; DEPOSITION; FILMS; GALLIUM NITRIDES; ION BEAMS; MAGNETIC FIELDS; MHZ RANGE 01-100; RADIOWAVE RADIATION; REFLECTIVITY; SILICON; SPUTTERING; SUBSTRATES; X RADIATION; X-RAY DIFFRACTION