Low-energy ion beam-based deposition of gallium nitride

Journal Article · Mon Feb 15 00:00:00 EST 2016 · Review of Scientific Instruments

DOI:https://doi.org/10.1063/1.4932988· OSTI ID:22483047

Wada, M. ^[1]

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1. Graduate School of Science and Engineering, Doshisha University, Kyotanabe, Kyoto 610-0321 (Japan)

An ion source with a remote plasma chamber excited by a 13.56 MHz radio frequency power was used for low-energy broad ion beam extraction. Optical emission spectral analyses showed the sputtering and postionization of a liquid gallium (Ga) target placed in a chamber separated from the source bombarded by argon (Ar) plasma guided by a bent magnetic field. In addition, an E × B probe successfully showed the extraction of low-energy Ga and Ar ion beams using a dual-electrode extractor configuration. By introducing dilute amounts of nitrogen gas into the system, formation of thin Ga-based films on a silicon substrate was demonstrated as determined from X-ray diffraction and X-ray reflectivity studies.

• OSTI ID: 22483047
• Journal Information: Review of Scientific Instruments, Vol. 87, Issue 2; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0034-6748
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ARGON IONS
DEPOSITION
FILMS
GALLIUM NITRIDES
ION BEAMS
MAGNETIC FIELDS
MHZ RANGE 01-100
RADIOWAVE RADIATION
REFLECTIVITY
SILICON
SPUTTERING
SUBSTRATES
X RADIATION
X-RAY DIFFRACTION