skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Steady-state photoluminescent excitation characterization of semiconductor carrier recombination

Journal Article · · Review of Scientific Instruments
DOI:https://doi.org/10.1063/1.4939047· OSTI ID:22482809
 [1]; ; ; ;  [2]
  1. Intel Corporation, Hillsboro, Oregon 97124 (United States)
  2. Department of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States)

Photoluminescence excitation spectroscopy is a contactless characterization technique that can provide valuable information about the surface and bulk recombination parameters of a semiconductor device, distinct from other sorts of photoluminescent measurements. For this technique, a temperature-tuned light emitting diode (LED) has several advantages over other light sources. The large radiation density offered by LEDs from near-infrared to ultraviolet region at a low cost enables efficient and fast photoluminescence measurements. A simple and inexpensive LED-based setup facilitates measurement of surface recombination velocity and bulk Shockley-Read-Hall lifetime, which are key parameters to assess device performance. Under the right conditions, this technique can also provide a contactless way to measure the external quantum efficiency of a solar cell.

OSTI ID:
22482809
Journal Information:
Review of Scientific Instruments, Vol. 87, Issue 1; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0034-6748
Country of Publication:
United States
Language:
English