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Title: Compact low temperature scanning tunneling microscope with in-situ sample preparation capability

We report on the design of a compact low temperature scanning tunneling microscope (STM) having in-situ sample preparation capability. The in-situ sample preparation chamber was designed to be compact allowing quick transfer of samples to the STM stage, which is ideal for preparing temperature sensitive samples such as ultra-thin metal films on semiconductor substrates. Conventional spring suspensions on the STM head often cause mechanical issues. To address this problem, we developed a simple vibration damper consisting of welded metal bellows and rubber pads. In addition, we developed a novel technique to ensure an ultra-high-vacuum (UHV) seal between the copper and stainless steel, which provides excellent reliability for cryostats operating in UHV. The performance of the STM was tested from 2 K to 77 K by using epitaxial thin Pb films on Si. Very high mechanical stability was achieved with clear atomic resolution even when using cryostats operating at 77 K. At 2 K, a clean superconducting gap was observed, and the spectrum was easily fit using the BCS density of states with negligible broadening.
Authors:
 [1] ;  [2] ; ; ;  [1] ;  [1] ;  [3] ;  [3] ;  [4] ;  [5]
  1. Department of Physics, The University of Texas, Austin, Texas 78712 (United States)
  2. (Korea, Republic of)
  3. (China)
  4. Department of Physics and EHSRC, University of Ulsan, Ulsan 680-749 (Korea, Republic of)
  5. Korea Research Institute of Standards and Science, Daejeon 305-340 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22482785
Resource Type:
Journal Article
Resource Relation:
Journal Name: Review of Scientific Instruments; Journal Volume: 86; Journal Issue: 9; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; COPPER; CRYOSTATS; DENSITY OF STATES; DESIGN; EPITAXY; FILMS; RESOLUTION; RUBBERS; SAMPLE PREPARATION; SCANNING TUNNELING MICROSCOPY; SEALS; SEMICONDUCTOR MATERIALS; STAINLESS STEELS; SUBSTRATES; WELDED JOINTS