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Title: Review of using gallium nitride for ionizing radiation detection

With the largest band gap energy of all commercial semiconductors, GaN has found wide application in the making of optoelectronic devices. It has also been used for photodetection such as solar blind imaging as well as ultraviolet and even X-ray detection. Unsurprisingly, the appreciable advantages of GaN over Si, amorphous silicon (a-Si:H), SiC, amorphous SiC (a-SiC), and GaAs, particularly for its radiation hardness, have drawn prompt attention from the physics, astronomy, and nuclear science and engineering communities alike, where semiconductors have traditionally been used for nuclear particle detection. Several investigations have established the usefulness of GaN for alpha detection, suggesting that when properly doped or coated with neutron sensitive materials, GaN could be turned into a neutron detection device. Work in this area is still early in its development, but GaN-based devices have already been shown to detect alpha particles, ultraviolet light, X-rays, electrons, and neutrons. Furthermore, the nuclear reaction presented by {sup 14}N(n,p){sup 14}C and various other threshold reactions indicates that GaN is intrinsically sensitive to neutrons. This review summarizes the state-of-the-art development of GaN detectors for detecting directly and indirectly ionizing radiation. Particular emphasis is given to GaN's radiation hardness under high-radiation fields.
Authors:
 [1] ;  [2] ; ;  [1] ;  [3] ;  [2]
  1. Nuclear Engineering Program, Department of Mechanical and Aerospace Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)
  2. (United States)
  3. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)
Publication Date:
OSTI Identifier:
22482266
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Reviews; Journal Volume: 2; Journal Issue: 3; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; ALPHA DETECTION; ALPHA PARTICLES; DOPED MATERIALS; GALLIUM NITRIDES; NEUTRON DETECTION; OPTOELECTRONIC DEVICES; RADIATION HARDNESS; SEMICONDUCTOR MATERIALS; SILICON CARBIDES; X RADIATION; X-RAY DETECTION