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Title: Thermal transport in tantalum oxide films for memristive applications

The thermal conductivity of amorphous TaO{sub x} memristive films having variable oxygen content is measured using time domain thermoreflectance. Thermal transport is described by a two-part model where the electrical contribution is quantified via the Wiedemann-Franz relation and the vibrational contribution by the minimum thermal conductivity limit for amorphous solids. The vibrational contribution remains constant near 0.9 W/mK regardless of oxygen concentration, while the electrical contribution varies from 0 to 3.3 W/mK. Thus, the dominant thermal carrier in TaO{sub x} switches between vibrations and charge carriers and is controllable either by oxygen content during deposition, or dynamically by field-induced charge state migration.
Authors:
; ; ; ; ; ;  [1] ;  [2]
  1. Sandia National Laboratories, Albuquerque, New Mexico 87123 (United States)
  2. Colorado School of Mines, Golden, Colorado 80401 (United States)
Publication Date:
OSTI Identifier:
22482265
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 2; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABUNDANCE; CARRIERS; CHARGE CARRIERS; CHARGE STATES; DEPOSITION; FILMS; OXYGEN; SOLIDS; SWITCHES; TANTALUM OXIDES; THERMAL CONDUCTIVITY