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Title: Gate tunable monolayer MoS{sub 2}/InP heterostructure solar cells

We demonstrate monolayer molybdenum disulfide (MoS{sub 2})/indium phosphide (InP) van der Waals heterostructure with remarkable photovoltaic response. Furthermore, benefiting from the atomically thin and semiconductor nature of MoS{sub 2}, we have designed the gate tunable MoS{sub 2}/InP heterostructure. Applied with a top gate voltage, the Fermi level of MoS{sub 2} is effectively tuned, and the barrier height at the MoS{sub 2}/InP heterojunction correspondingly changes. The power conversion efficiency of MoS{sub 2}/InP solar cells has reached a value of 7.1% under AM 1.5G illumination with a gate voltage of +6 V. The tunable MoS{sub 2}/InP heterostructure may be promising for highly efficient solar cells.
Authors:
; ; ; ; ; ;  [1]
  1. College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027 (China)
Publication Date:
OSTI Identifier:
22482261
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 15; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; EFFICIENCY; ELECTRIC POTENTIAL; FERMI LEVEL; HETEROJUNCTIONS; ILLUMINANCE; INDIUM; INDIUM PHOSPHIDES; MOLYBDENUM SULFIDES; PHOTOVOLTAIC EFFECT; SEMICONDUCTOR MATERIALS; SOLAR CELLS; VAN DER WAALS FORCES