Gate tunable monolayer MoS{sub 2}/InP heterostructure solar cells

Journal Article · Mon Oct 12 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4933294· OSTI ID:22482261

Lin, Shisheng; Wang, Peng; Li, Xiaoqiang; Wu, Zhiqian; Xu, Zhijuan; Zhang, Shengjiao; Xu, Wenli ^[1]

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1. College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027 (China)

We demonstrate monolayer molybdenum disulfide (MoS{sub 2})/indium phosphide (InP) van der Waals heterostructure with remarkable photovoltaic response. Furthermore, benefiting from the atomically thin and semiconductor nature of MoS{sub 2}, we have designed the gate tunable MoS{sub 2}/InP heterostructure. Applied with a top gate voltage, the Fermi level of MoS{sub 2} is effectively tuned, and the barrier height at the MoS{sub 2}/InP heterojunction correspondingly changes. The power conversion efficiency of MoS{sub 2}/InP solar cells has reached a value of 7.1% under AM 1.5G illumination with a gate voltage of +6 V. The tunable MoS{sub 2}/InP heterostructure may be promising for highly efficient solar cells.

• OSTI ID: 22482261
• Journal Information: Applied Physics Letters, Vol. 107, Issue 15; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
EFFICIENCY
ELECTRIC POTENTIAL
FERMI LEVEL
HETEROJUNCTIONS
ILLUMINANCE
INDIUM
INDIUM PHOSPHIDES
MOLYBDENUM SULFIDES
PHOTOVOLTAIC EFFECT
SEMICONDUCTOR MATERIALS
SOLAR CELLS
VAN DER WAALS FORCES