skip to main content

SciTech ConnectSciTech Connect

Title: Carrier injection engineering in nanowire transistors via dopant and shape monitoring of the access regions

This work theoretically studies the influence of both the geometry and the discrete nature of dopants of the access regions in ultra-scaled nanowire transistors. By means of self-consistent quantum transport simulations, we show that discrete dopants induce quasi-localized states which govern carrier injection into the channel. Carrier injection can be enhanced by taking advantage of the dielectric confinement occurring in these access regions. We demonstrate that the optimization of access resistance can be obtained by a careful control of shape and dopant position. These results pave the way for contact resistance engineering in forthcoming device generations.
Authors:
; ; ; ;  [1]
  1. IM2NP UMR CNRS 7334, Aix-Marseille Université, Technopôle de Château Gombert, 60 Rue Frédéric Joliot Curie, Bâtiment Néel,13453 Marseille (France)
Publication Date:
OSTI Identifier:
22482258
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 15; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CARRIERS; CONFINEMENT; CONTROL; DIELECTRIC MATERIALS; DOPED MATERIALS; ENGINEERING; MONITORING; SHAPE; SIMULATION; TRANSISTORS