Carrier injection engineering in nanowire transistors via dopant and shape monitoring of the access regions

Berrada, Salim; Bescond, Marc; Cavassilas, Nicolas; Raymond, Laurent; Lannoo, Michel

doi:10.1063/1.4933392

Title: Carrier injection engineering in nanowire transistors via dopant and shape monitoring of the access regions

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Abstract

This work theoretically studies the influence of both the geometry and the discrete nature of dopants of the access regions in ultra-scaled nanowire transistors. By means of self-consistent quantum transport simulations, we show that discrete dopants induce quasi-localized states which govern carrier injection into the channel. Carrier injection can be enhanced by taking advantage of the dielectric confinement occurring in these access regions. We demonstrate that the optimization of access resistance can be obtained by a careful control of shape and dopant position. These results pave the way for contact resistance engineering in forthcoming device generations.

Authors:

Berrada, Salim; Bescond, Marc; Cavassilas, Nicolas; Raymond, Laurent; Lannoo, Michel ^[1]

IM2NP UMR CNRS 7334, Aix-Marseille Université, Technopôle de Château Gombert, 60 Rue Frédéric Joliot Curie, Bâtiment Néel,13453 Marseille (France)

Publication Date:: Mon Oct 12 00:00:00 EDT 2015

OSTI Identifier:: 22482258

Resource Type:: Journal Article

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 107; Journal Issue: 15; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951

Country of Publication:: United States

Language:: English

Subject:: 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CARRIERS; CONFINEMENT; CONTROL; DIELECTRIC MATERIALS; DOPED MATERIALS; ENGINEERING; MONITORING; SHAPE; SIMULATION; TRANSISTORS

Citation Formats


                    Berrada, Salim, Bescond, Marc, Cavassilas, Nicolas, Raymond, Laurent, and Lannoo, Michel. Carrier injection engineering in nanowire transistors via dopant and shape monitoring of the access regions.  United States: N. p., 2015. 
        Web.  doi:10.1063/1.4933392.

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                    Berrada, Salim, Bescond, Marc, Cavassilas, Nicolas, Raymond, Laurent, & Lannoo, Michel. Carrier injection engineering in nanowire transistors via dopant and shape monitoring of the access regions.  United States.  https://doi.org/10.1063/1.4933392

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                    Berrada, Salim, Bescond, Marc, Cavassilas, Nicolas, Raymond, Laurent, and Lannoo, Michel. 2015.  
        "Carrier injection engineering in nanowire transistors via dopant and shape monitoring of the access regions".  United States.  https://doi.org/10.1063/1.4933392.

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@article{osti_22482258,

  title        = {Carrier injection engineering in nanowire transistors via dopant and shape monitoring of the access regions},

  author       = {Berrada, Salim and Bescond, Marc and Cavassilas, Nicolas and Raymond, Laurent and Lannoo, Michel},

  abstractNote = {This work theoretically studies the influence of both the geometry and the discrete nature of dopants of the access regions in ultra-scaled nanowire transistors. By means of self-consistent quantum transport simulations, we show that discrete dopants induce quasi-localized states which govern carrier injection into the channel. Carrier injection can be enhanced by taking advantage of the dielectric confinement occurring in these access regions. We demonstrate that the optimization of access resistance can be obtained by a careful control of shape and dopant position. These results pave the way for contact resistance engineering in forthcoming device generations.},

  doi          = {10.1063/1.4933392},

  url          = {https://www.osti.gov/biblio/22482258},
  journal      = {Applied Physics Letters},

  issn         = {0003-6951},

  number       = 15,

  volume       = 107,

  place        = {United States},

  year         = {Mon Oct 12 00:00:00 EDT 2015},

  month        = {Mon Oct 12 00:00:00 EDT 2015}

}

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