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Title: Atomic layer deposition of absorbing thin films on nanostructured electrodes for short-wavelength infrared photosensing

Atomic layer deposition (ALD), prized for its high-quality thin-film formation in the absence of high temperature or high vacuum, has become an industry standard for the large-area deposition of a wide array of oxide materials. Recently, it has shown promise in the formation of nanocrystalline sulfide films. Here, we demonstrate the viability of ALD lead sulfide for photodetection. Leveraging the conformal capabilities of ALD, we enhance the absorption without compromising the extraction efficiency in the absorbing layer by utilizing a ZnO nanowire electrode. The nanowires are first coated with a thin shunt-preventing TiO{sub 2} layer, followed by an infrared-active ALD PbS layer for photosensing. The ALD PbS photodetector exhibits a peak responsivity of 10{sup −2} A W{sup −1} and a shot-derived specific detectivity of 3 × 10{sup 9} Jones at 1530 nm wavelength.
Authors:
; ; ; ;  [1] ;  [2]
  1. Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4 (Canada)
  2. Advanced Technology, Materials and Research, Research and Development, Hoge Wei 33- Toyota Technical Centre, B-1930 Zaventem (Belgium)
Publication Date:
OSTI Identifier:
22482254
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 15; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DEPOSITION; EFFICIENCY; ELECTRODES; LAYERS; LEAD SULFIDES; MATERIALS; NANOWIRES; PEAKS; THIN FILMS; TITANIUM OXIDES; WAVELENGTHS; ZINC OXIDES