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Title: Enhanced inverse spin Hall contribution at high microwave power levels in La{sub 0.67}Sr{sub 0.33}MnO{sub 3}/SrRuO{sub 3} epitaxial bilayers

We have investigated microwave power dependence of dc voltage generated upon ferromagnetic resonance in a La{sub 0.67}Sr{sub 0.33}MnO{sub 3}/SrRuO{sub 3} epitaxial bilayer film at room temperature. With increasing microwave power above ∼75 mW, the magnitude of the voltage signal decreases as the sample temperature approaches the Curie temperature of La{sub 0.67}Sr{sub 0.33}MnO{sub 3} due to heating effects. By analyzing the dependence of the voltage signal on the direction of the magnetic field, we show that with increasing microwave power the contribution from the inverse spin Hall effect becomes more dominant than that from the anisotropic magnetoresistance effect.
Authors:
;  [1] ;  [1] ;  [2] ;  [1] ;  [2] ;  [2] ;  [2]
  1. Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan)
  2. (Japan)
Publication Date:
OSTI Identifier:
22482246
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 15; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANISOTROPY; CURIE POINT; ELECTRIC POTENTIAL; EPITAXY; FERROMAGNETIC RESONANCE; FILMS; HALL EFFECT; HEATING; LAYERS; MAGNETIC FIELDS; MAGNETORESISTANCE; MICROWAVE RADIATION; SIGNALS; SPIN; TEMPERATURE RANGE 0273-0400 K