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Title: Dual role of boron in improving electrical performance and device stability of low temperature solution processed ZnO thin film transistors

In this paper, we have demonstrated the dual role of boron doping in enhancing the device performance parameters as well as the device stability in low temperatures (200 °C) sol-gel processed ZnO thin film transistors (TFTs). Our studies suggest that boron is able to act as a carrier generator and oxygen vacancy suppressor simultaneously. Boron-doped ZnO TFTs with 8 mol. % of boron concentration demonstrated field-effect mobility value of 1.2 cm{sup 2} V{sup −1} s{sup −1} and threshold voltage of 6.2 V, respectively. Further, these devices showed lower shift in threshold voltage during the hysteresis and bias stress measurements as compared to undoped ZnO TFTs.
Authors:
; ; ; ;  [1]
  1. Plastic Electronics and Energy Laboratory (PEEL), Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Powai, Mumbai-400076 (India)
Publication Date:
OSTI Identifier:
22482242
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 15; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ABUNDANCE; BORON; CARRIERS; CONCENTRATION RATIO; DOPED MATERIALS; ELECTRIC POTENTIAL; HYSTERESIS; MOBILITY; OXYGEN; PERFORMANCE; SOL-GEL PROCESS; STABILITY; TEMPERATURE RANGE 0400-1000 K; THIN FILMS; TRANSISTORS; VACANCIES; ZINC OXIDES