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Title: Resonant energy transfer between Eu luminescent sites and their local geometry in GaN

Eu-doped GaN is a solid state material with promising features for quantum manipulation. In this study, we investigate the population dynamics of Eu in ions in this system by resonant excitation. From differences in the emission related to transitions between the {sup 5}D{sub 0} and {sup 7}F{sub 2} manifold in the Eu ions, we can distinguish different luminescence sites and observe that a resonant energy transfer takes place between two of these sites which are in proximity of each other. The time constants related to this energy transfer are on the order of 100 μs. By using different substrates, the energy transfer efficiency could be strongly altered, and it is demonstrated that the coupling between ions has an out-of-plane character. Based on these results, a microscopic model of this combined center is presented.
Authors:
; ; ; ; ;  [1]
  1. Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan)
Publication Date:
OSTI Identifier:
22482233
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 15; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; COUPLING; DOPED MATERIALS; ENERGY TRANSFER; EUROPIUM IONS; EXCITATION; GALLIUM NITRIDES; GEOMETRY; LUMINESCENCE; SOLIDS; SUBSTRATES