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Title: A 350-nm-band GaN/AlGaN multiple-quantum-well laser diode on bulk GaN

We have demonstrated the pulsed operation of a 350-nm-band ultraviolet laser diode with a vertical current path. The laser structure was grown on a (0001)-face bulk GaN substrate. The lasing wavelength was 356.6 nm and the peak output power reached to 10 mW from the one side of uncoated facets under pulsed current operation with a pulse duration of 10‚ÄČns and a repetition frequency of 5 kHz at room temperature. The GaN substrate is expected to provide a cleaved facet configuration leading to an excellent far-field pattern as well as an advantageous thermal management solution of the devices relative to sapphire substrates. The far-field pattern of actual device on GaN substrate has been improved dramatically compared with distorted one on that of sapphire substrates.
Authors:
; ; ; ; ;  [1]
  1. Hamamatsu Photonics K. K., 5000 Hirakuchi, Hamakita-ku, Hamamatsu 434-8601 (Japan)
Publication Date:
OSTI Identifier:
22482231
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 15; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; GALLIUM NITRIDES; KHZ RANGE 01-100; LASERS; PULSES; QUANTUM WELLS; SAPPHIRE; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; ULTRAVIOLET RADIATION; WAVELENGTHS