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Title: Low resistivity W{sub x}V{sub 1−x}O{sub 2}-based multilayer structure with high temperature coefficient of resistance for microbolometer applications

Materials that exhibit semiconductor-to-metal phase transition (SMT) are commonly used as sensing layers for the fabrication of uncooled microbolometers. The development of highly responsive microbolometers would benefit from using a sensing material that possesses a large thermal coefficient of resistance (TCR) close to room temperature and a resistivity low enough to compromise between noise reduction and high TCR, while it should also satisfies the requirements of current CMOS technology. Moreover, a TCR that remains constant when the IR camera surrounding temperature varies would contribute to achieve reliable temperature measurements without additional corrections steps for TCR temperature dependence. In this paper, the characteristics of the SMT occurring in undoped and tungsten-doped vanadium dioxide thin films deposited on LaAlO{sub 3} (100) substrates are investigated. They are further exploited to fabricate a W{sub x}V{sub 1−x}O{sub 2} (0 ≤ x ≤ 2.5) multilayer structure exhibiting a bottom-up gradient of tungsten content. This MLS displays a combination of properties that is promising for application to uncooled microbolometer, such as a large TCR of −10.4%/ °C and low resistivity values ranging from 0.012 to 0.10 Ω-cm over the temperature range 22 °C–42 °C.
Authors:
; ;  [1]
  1. INRS-Énergie, Matériaux et Télécommunications, 1650 Boulevard Lionel Boulet, Varennes, Québec J3X 1S2 (Canada)
Publication Date:
OSTI Identifier:
22482227
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 14; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINATES; BOLOMETERS; CAMERAS; DOPED MATERIALS; LANTHANUM COMPOUNDS; LAYERS; PHASE TRANSFORMATIONS; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE; TEMPERATURE MEASUREMENT; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; TUNGSTEN; VANADIUM OXIDES