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Title: Creating periodic local strain in monolayer graphene with nanopillars patterned by self-assembled block copolymer

A simple and viable method was developed to produce biaxial strain in monolayer graphene on an array of SiO{sub 2} nanopillars. The array of SiO{sub 2} nanopillars (1 cm{sup 2} in area, 80 nm in height, and 40 nm in pitch) was fabricated by employing self-assembled block copolymer through simple dry etching and deposition processes. According to high resolution micro-Raman spectroscopy and atomic force microscopy analyses, 0.9% of maximum biaxial tensile strain and 0.17% of averaged biaxial tensile strain in graphene were created. This technique provides a simple and viable method to form biaxial tensile strain in graphene and offers a practical platform for future studies in graphene strain engineering.
Authors:
; ; ; ; ;  [1] ; ;  [2]
  1. Department of Electrical and Computer Engineering, University of Wisconsin–Madison, Madison, Wisconsin 53706 (United States)
  2. Department of Chemical and Biological Engineering, University of Wisconsin–Madison, Madison, Wisconsin 53706 (United States)
Publication Date:
OSTI Identifier:
22482220
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 14; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ATOMIC FORCE MICROSCOPY; COPOLYMERS; DEPOSITION; ETCHING; GRAPHENE; PERIODICITY; RAMAN SPECTROSCOPY; RESOLUTION; SILICA; SILICON OXIDES; STRAINS